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Abstract Fiber-based electronics enabling lightweight and mechanically flexible/stretchable functions are desirable for numerous e-textile/e-skin optoelectronic applications. These wearable devices require low-cost manufacturing, high reliability, multifunctionality and long-term stability. Here, we report the preparation of representative classes of 3D-inorganic nanofiber network (FN) films by a blow-spinning technique, including semiconducting indium-gallium-zinc oxide (IGZO) and copper oxide, as well as conducting indium-tin oxide and copper metal. Specifically, thin-film transistors based on IGZO FN exhibit negligible performance degradation after one thousand bending cycles and exceptional room-temperature gas sensing performance. Owing to their great stretchability, these metal oxide FNs can be laminated/embedded on/into elastomers, yielding multifunctional single-sensing resistors as well as fully monolithically integrated e-skin devices. These can detect and differentiate multiple stimuli including analytes, light, strain, pressure, temperature, humidity, body movement, and respiratory functions. All of these FN-based devices exhibit excellent sensitivity, response time, and detection limits, making them promising candidates for versatile wearable electronics.
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Metal oxide (MO) semiconductor thin films prepared from solution typically require multiple hours of thermal annealing to achieve optimal lattice densification, efficient charge transport, and stable device operation, presenting a major barrier to roll-to-roll manufacturing. Here, we report a highly efficient, cofuel-assisted scalable combustion blade-coating (CBC) process for MO film growth, which involves introducing both a fluorinated fuel and a preannealing step to remove deleterious organic contaminants and promote complete combustion. Ultrafast reaction and metal–oxygen–metal (M-O-M) lattice condensation then occur within 10–60 s at 200–350 °C for representative MO semiconductor [indium oxide (In2O3), indium-zinc oxide (IZO), indium-gallium-zinc oxide (IGZO)] and dielectric [aluminum oxide (Al2O3)] films. Thus, wafer-scale CBC fabrication of IGZO-Al2O3thin-film transistors (TFTs) (60-s annealing) with field-effect mobilities as high as ∼25 cm2V−1s−1and negligible threshold voltage deterioration in a demanding 4,000-s bias stress test are realized. Combined with polymer dielectrics, the CBC-derived IGZO TFTs on polyimide substrates exhibit high flexibility when bent to a 3-mm radius, with performance bending stability over 1,000 cycles.